Determination of the Matrix Element of the Quasi-Momentum Operator in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte.

Autor: Shevchenko, O. Yu., Radantsev, V. F., Yafyasov, A. M., Bozhevolnov, V. B., Ivankiv, I. M., Perepelkin, A. D.
Předmět:
Zdroj: Semiconductors; Apr2002, Vol. 36 Issue 4, p390, 4p
Abstrakt: The field-effect method in electrolyte was used to study the zero-gap semiconductor HgSe-electrolyte (saturated solution of KCl) system by measuring the capacitance-voltage and current-voltage characteristics. A technique for the estimation of the matrix element P of the quasi-momentum operator from capacitance-voltage characteristics was proposed, and the value of P for HgSe was determined at T = 295 K. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index