| Autor: |
Georgobiani, A. N., Gruzintsev, A. N., Volkov, V. T., Vorob’ev, M. O. |
| Předmět: |
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| Zdroj: |
Semiconductors; Mar2002, Vol. 36 Issue 3, p265, 5p |
| Abstrakt: |
It is shown that the introduction of a nitrogen acceptor impurity when growing zinc oxide films can result in the formation of hole conduction only after annealing in atomic oxygen vapor. Annealing affects not only electrical properties but also the luminescence of ZnO:N. The bands in the photoluminescence spectrum, which are related to nitrogen, appear in the ultraviolet and visible regions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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