| Autor: |
Naumov, V. V., Bochkarev, V. F., Trushin, O. S., Goryachev, A. A., Khasanov, É. G., Lebedev, A. A., Kunitsyn, A. S. |
| Předmět: |
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| Zdroj: |
Technical Physics; Aug2001, Vol. 46 Issue 8, p1020, 6p |
| Abstrakt: |
The effect of low-energy ion bombardment on the growth and properties of thin films deposited by rf plasma sputtering at low substrate temperatures is studied. The dependences of the film thickness, density, crystal structure, and conductivity on the bias voltage applied to the substrate are obtained. At biases ranging from 0 to -30 V, nickel films are polycrystalline; at higher biases, they exhibit axial (111) texture. At the bias -60 V, the density of the Ni films is close to that of the bulk metal and the crystal structure of the films is the most ordered. With a further increase in the bias, the density of the films drops because of gas (argon and residual gases) atoms incorporated into the films. The same bias dependence of the density is observed for amorphous films of binary alloys of d and f metals. In this case, the films deposited at the substrate bias -40 V have the highest density. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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