Quantification of dopant implants in oxidized silicon on sapphire using secondary-ion mass spectrometry.
| Autor: | Dowsett, M. G., Parker, E. H. C., King, R. M., Mole, P. J. |
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| Zdroj: | Journal of Applied Physics; Nov1983, Vol. 54 Issue 11, p6340-6345, 6p |
| Databáze: | Complementary Index |
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