Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source.
| Autor: | Eu, V., Feng, M., Zielinski, T., Whelan, J. M. |
|---|---|
| Zdroj: | Journal of Applied Physics; Feb1982, Vol. 53 Issue 2, p1266-1268, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Eu, V., Feng, M., Zielinski, T., Whelan, J. M. |
|---|---|
| Zdroj: | Journal of Applied Physics; Feb1982, Vol. 53 Issue 2, p1266-1268, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|