Effect of Misorientation Angle on the Photoluminescence Spectra of Si (δ)-Doped GaAs (111)A Layers Grown by Molecular Beam Epitaxy.

Autor:	Galiev, G. B., Mokerov, V. G., Khabarov, Yu. V.
Předmět:	GALLIUM arsenide SILICON PHOTOLUMINESCENCE MOLECULAR beam epitaxy
Zdroj:	Doklady Physics; Feb2001, Vol. 46 Issue 2, p88, 4p
Abstrakt:	Examines the effect of misorientation angle on the photoluminescence spectra of silicon-doped gallium arsenide A layers grown by molecular beam epitaxy. Hall effect; Behavior of the silicon-band as a function of misorientation angle; Probability of occupying arsenic sites by silicon atoms.
Databáze:	Complementary Index
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