| Autor: |
Kuznetsov, G. F., Ral’chenko, V. G., Varnin, V. P., Polyakov, V. I., Khomich, A. V., Rukovishnikov, A. I., Temirov, Yu. Sh., Teremetskaya, I. G., Tkal’, N. V., Anisimov, V. G. |
| Předmět: |
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| Zdroj: |
Crystallography Reports; Mar2002, Vol. 47 Issue 2, p298, 10p |
| Abstrakt: |
Crystallite size in polycrystalline diamond layers with a grain size exceeding 3 µm are determined by the X-ray topography method with the use of a divergent beam from a point source. For layers with thicknesses in the range 80-700 µm deposited in SHF plasma and 1-40 µm obtained by the method of a hot filament, the size distribution of crystallites is obtained. Asterism of some spots on X-ray diffraction patterns from the diamond layers with thicknesses exceeding 100 µm showed plastic deformation of individual crystallites. The parameters of deep levels in the band gap of undoped high-resistance diamond layers and the acceptor-type defects with an activation energy higher than 1 eV are determined by the method of charge relaxation spectroscopy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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