Defect-related emissions in photoluminescence spectra of AlxGa1-xAs grown by molecular beam epitaxy.

Autor: Mihara, M., Nomura, Y., Mannoh, M., Yamanaka, K., Naritsuka, S., Shinozaki, K., Yuasa, T., Ishii, M.
Zdroj: Journal of Applied Physics; May1984, Vol. 55 Issue 10, p3765-3768, 4p
Databáze: Complementary Index