MeV-energy As+ implantation into Si: Extended-defect reduction and planar n-p-n transistor fabrication.
Autor: | Takahashi, Mitsutoshi, Konaka, Shinsuke, Kajiyama, Kenji |
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Zdroj: | Journal of Applied Physics; Oct1983, Vol. 54 Issue 10, p6041-6043, 3p |
Databáze: | Complementary Index |
Externí odkaz: |