MeV-energy As+ implantation into Si: Extended-defect reduction and planar n-p-n transistor fabrication.

Autor: Takahashi, Mitsutoshi, Konaka, Shinsuke, Kajiyama, Kenji
Zdroj: Journal of Applied Physics; Oct1983, Vol. 54 Issue 10, p6041-6043, 3p
Databáze: Complementary Index