Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation.
| Autor: | Wilson, R. G., Jamba, D. M., Deline, V. R., Evans, C. A., Park, Y. S. |
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| Zdroj: | Journal of Applied Physics; Jul1983, Vol. 54 Issue 7, p3849-3854, 6p |
| Databáze: | Complementary Index |
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