Electrical properties of S implants in GaAs activated by infrared rapid thermal annealing.
| Autor: | Kuzuhara, M., Kohzu, H., Takayama, Y. |
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| Zdroj: | Journal of Applied Physics; Jun1983, Vol. 54 Issue 6, p3121-3124, 4p |
| Databáze: | Complementary Index |
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