High-output room-temperature pulsed operation for broad contact InP/In0.53Ga0.47As/InP lasers grown by molecular beam epitaxy.

Autor: DeFreez, R. K., Elliott, R. A., Blakemore, J. S., Miller, B. I., McFee, J. H., Martin, R. J.
Zdroj: Journal of Applied Physics; May1983, Vol. 54 Issue 5, p2177-2182, 6p
Databáze: Complementary Index