Electron microscopy studies of pulsed electron beam annealing in phosphorus-implanted silicon.

Autor: Tholomier, M., Pitaval, M., Ambri, M., Barbier, D., Laugier, A.
Zdroj: Journal of Applied Physics; Mar1983, Vol. 54 Issue 3, p1588-1594, 7p
Databáze: Complementary Index