The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide.
Autor: | Jahnel, F., Biersack, J., Crowder, B. L., d'Heurle, F. M., Fink, D., Isaac, R. D., Lucchese, C. J., Petersson, C. S. |
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Zdroj: | Journal of Applied Physics; Nov1982, Vol. 53 Issue 11, p7372-7378, 7p |
Databáze: | Complementary Index |
Externí odkaz: |