High speed response of a GaAs metal-semiconductor field-effect transistor to electron-beam excitation.

Autor:	Flesner, L. D., Davis, N. M., Wieder, H. H.
Zdroj:	Journal of Applied Physics; May1982, Vol. 53 Issue 5, p3873-3877, 5p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu