CO2 laser annealing characteristics of high-dose boron- and arsenic-implanted silicon.
| Autor: | Tsien, P. H., Götzlich, J., Ryssel, H., Ruge, I. |
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| Zdroj: | Journal of Applied Physics; Jan1982, Vol. 53 Issue 1, p663-668, 6p |
| Databáze: | Complementary Index |
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