Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy.
| Autor: | Katsube, Teruaki, Kakimoto, Koichi, Ikoma, Toshiaki |
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| Zdroj: | Journal of Applied Physics; May1981, Vol. 52 Issue 5, p3504-3508, 5p |
| Databáze: | Complementary Index |
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