The ''inhibition effect'' of a trichloroethane oxidation to suppress the stacking-fault nucleation in silicon.
Autor: | Claeys, C. L., Declerck, G. J., Van Overstraeten, R. J. |
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Zdroj: | Journal of Applied Physics; Dec1980, Vol. 51 Issue 12, p6183-6188, 6p |
Databáze: | Complementary Index |
Externí odkaz: |