The ''inhibition effect'' of a trichloroethane oxidation to suppress the stacking-fault nucleation in silicon.

Autor: Claeys, C. L., Declerck, G. J., Van Overstraeten, R. J.
Zdroj: Journal of Applied Physics; Dec1980, Vol. 51 Issue 12, p6183-6188, 6p
Databáze: Complementary Index