Doping characteristics and electrical properties of Be-doped p-type AlxGa1-xAs by liquid phase epitaxy.
| Autor: | Fujita, Shigeo, Bedair, S.M., Littlejohn, M.A., Hauser, J.R. |
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| Zdroj: | Journal of Applied Physics; Oct1980, Vol. 51 Issue 10, p5438-5444, 7p |
| Databáze: | Complementary Index |
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