Electron trapping and detrapping characteristics of arsenic-implanted SiO2 layers.
| Autor: | DeKeersmaecker, R. F., DiMaria, D. J. |
|---|---|
| Zdroj: | Journal of Applied Physics; Feb1980, Vol. 51 Issue 2, p1085-1101, 17p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | DeKeersmaecker, R. F., DiMaria, D. J. |
|---|---|
| Zdroj: | Journal of Applied Physics; Feb1980, Vol. 51 Issue 2, p1085-1101, 17p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|