Silicide formation by high-dose Si+-ion implantation of Pd.
Autor: | Chapman, G. E., Lau, S. S., Matteson, S., Mayer, J. W. |
---|---|
Zdroj: | Journal of Applied Physics; Oct1979, Vol. 50 Issue 10, p6321-6327, 7p |
Databáze: | Complementary Index |
Externí odkaz: |