Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique).
| Autor: | DiMaria, D. J., Young, D. R., DeKeersmaecker, R. F., Hunter, W. R., Serrano, C. M. |
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| Zdroj: | Journal of Applied Physics; Nov1978, Vol. 49 Issue 11, p5441-5444, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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