Growth of thick liquid-phase epitaxial GaAs : Si layers and their characterization.

Autor: Kachare, A. H., Spitzer, W. G., Whelan, J. M., Narayanan, G. H.
Zdroj: Journal of Applied Physics; Nov1976, Vol. 47 Issue 11, p5022-5029, 8p
Databáze: Complementary Index