Heterojunction laser operation of N-free and N-doped GaAs1-yPy (y=0.42-0.43, λ∼6200 Å, 77 °K) near the direct-indirect transition (y∼yc?0.46).
Autor: | Coleman, J. J., Holonyak Jr., N., Ludowise, M. J., Wright, P. D., Groves, W. O., Keune, D. L., Craford, M. G. |
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Zdroj: | Journal of Applied Physics; Aug1975, Vol. 46 Issue 8, p3556-3561, 6p |
Databáze: | Complementary Index |
Externí odkaz: |