Effect of atmospheres on arsenic diffusion into silicon from the doped oxide layer.
Autor: | Itoh, Tadatsugu, Shinada, Kazuyoshi, Ohmura, Yamichi, Kirita, Kei |
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Zdroj: | Journal of Applied Physics; May1975, Vol. 46 Issue 5, p1943-1946, 4p |
Databáze: | Complementary Index |
Externí odkaz: |