Effect of atmospheres on arsenic diffusion into silicon from the doped oxide layer.

Autor: Itoh, Tadatsugu, Shinada, Kazuyoshi, Ohmura, Yamichi, Kirita, Kei
Zdroj: Journal of Applied Physics; May1975, Vol. 46 Issue 5, p1943-1946, 4p
Databáze: Complementary Index