Thallium-doped silicon ionization and excitation levels by infrared absorption.
| Autor: | Nevin, Joseph H., Henderson, H. Thurman |
|---|---|
| Zdroj: | Journal of Applied Physics; May1975, Vol. 46 Issue 5, p2130-2133, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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| Autor: | Nevin, Joseph H., Henderson, H. Thurman |
|---|---|
| Zdroj: | Journal of Applied Physics; May1975, Vol. 46 Issue 5, p2130-2133, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|