Residual acceptors in natural GaSb and Gaxln1-xSb; their contribution to transport between 4.7 and 300 °K.
| Autor: | Campos, M. D'Olne, Gouskov, A., Gouskov, L., Pons, J. C. |
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| Zdroj: | Journal of Applied Physics; Jun1973, Vol. 44 Issue 6, p2642-2646, 5p |
| Databáze: | Complementary Index |
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