Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation.
Autor: | Hsieh, C. M., Maher, D. M. |
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Zdroj: | Journal of Applied Physics; Mar1973, Vol. 44 Issue 3, p1302-1306, 5p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Hsieh, C. M., Maher, D. M. |
---|---|
Zdroj: | Journal of Applied Physics; Mar1973, Vol. 44 Issue 3, p1302-1306, 5p |
Databáze: | Complementary Index |
Externí odkaz: |