| Autor: |
Vanden Berghe, R., Vlaeminck, R., Craen, M., Herbots, N., Gloesener, D., Wiele, F., Doncker, G., Vennik, J., Tollet, H., Creemers, C., Neyens, A., Vooren, J., Butaye, L., Adams, F., Gybels, R. |
| Zdroj: |
Fresenius' Zeitschrift für Analytische Chemie; 1987, Vol. 329 Issue 2/3, p380-384, 5p |
| Abstrakt: |
SiN, thin layers were analyzed by AES, SIMS, ISS and RBS. A comparison of the experimental results is made, and the artifacts and characteristics for each experimental method are discussed. It seems that of all these methods, only RBS is suitable for analysing silicon nitride layers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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