Positron annihilation in silicon crystals with mechanically processed surfaces.

Autor: Arefiev, K., Karetnikov, A., Vorobiev, S.
Zdroj: Applied Physics; 1975, Vol. 8 Issue 3, p273-276, 4p
Abstrakt: The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index