Autor: |
Arefiev, K., Karetnikov, A., Vorobiev, S. |
Zdroj: |
Applied Physics; 1975, Vol. 8 Issue 3, p273-276, 4p |
Abstrakt: |
The angular correlation curves of the annihilation photons and the probability of three-quantum annihilation in silicon single crystals with mechanically processed surfaces were measured. The narrowing of the angular correlation curves increases and the three-quantum yield decreases with the depth of the surface abrasion. This is tentatively interpreted in terms of formation of positronium states on the surface of the silicon crystals. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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