| Autor: |
Ma, Jianping, Chen, Zhiming, Lu, Gang, Yu, Mingbin, Hang, Lianmao, Feng, Xianfeng, Lei, Tianmin |
| Předmět: |
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| Zdroj: |
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 3/20/2002, Vol. 16 Issue 6/7, p1047, 5p |
| Abstrakt: |
Intense photoluminescence (PL) has been observed at room temperature from the polycrystalline SiC samples prepared from carbon-saturated Si melt at a temperature ranging from 1500 to 1650°C. Composition and structure of the samples have been confirmed by means of X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. PL measurements with 325 nm UV light excitation revealed that the room temperature PL spectrum of the samples consists of 3 luminescent bands, the peak energies of which are 2.38 eV, 2.77 eV and 3.06 eV, respectively. The 2.38 eV band is much stronger than the others. It is suggested that some extrinsic PL mechanisms associated with defect or interface states would be responsible to the intensive PL observed at room temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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