Segregation of the Cu atom at the ferromagnetic/antiferromagnetic interlayer in spin-valve structures.

Autor: Li, M. H., Yu, G. H., Jiang, H. W., Cai, J. W., Lai, W. Y., Zhu, F. W.
Předmět:
Zdroj: Journal of Applied Physics; 9/1/2002, Vol. 92 Issue 5, p2620, 4p, 4 Graphs
Abstrakt: Two sets of NiFe/FeMn films with Ta and Ta/Cu buffer layers were prepared by magnetron sputtering. Results show that the exchange bias field of NiFe/FeMn films with a Ta/Cu buffer is lower than that of the films with a Ta buffer. The crystalline texture, surface roughness, and element distribution of these two sets of samples were examined, and there is no apparent difference for the texture and roughness. However, the segregation of Cu atoms on the surface of NiFe in the trilayer of Ta/Ctt/NiFe has been observed by using the angle-resolved x-ray photoelectron spectroscopy. The decrease of the exchange bias field for NiFe/FeMn films with a Ta/Cu buffer layers is mainly caused by the segragation of Cu atoms to the surface of the NiFe layer. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index