The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B and (100) InP substrates.
| Autor: | Antypas, G. A., Houng, Y. M., Hyder, S. B., Escher, J. S., Gregory, P. E. |
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| Zdroj: | Applied Physics Letters; Sep1978, Vol. 33 Issue 5, p463-465, 3p |
| Databáze: | Complementary Index |
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