| Autor: |
Lackner, D., Steger, M., Thewalt, M. L. W., Pitts, O. J., Cherng, Y. T., Watkins, S. P., Plis, E., Krishna, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Feb2012, Vol. 111 Issue 3, p034507, 9p, 4 Charts, 11 Graphs |
| Abstrakt: |
InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally, the initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector with a 40 nm period are shown. Its cutoff wavelength is 0.15 eV (8.5 μm), in good agreement with the predicted type II transition energy of 0.17 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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