| Autor: |
Morita, K., Soda, K., Katoh, T., Hanebuchi, M. |
| Zdroj: |
Journal of Electronic Materials; May1996, Vol. 25 Issue 5, p727-731, 5p |
| Abstrakt: |
Thin films of Au and Ag deposited onto the InP(001)-p(2 × 4) surface at room temperature have been characterized by means of combined surface-layer analysis of low energy electron diffraction, reflection high energy electron diffraction, Auger electron spectroscopy, and Rutherford backscattering spec-troscopy-channeling techniques. It has been found that the Au film grows epitaxially in the layer-by-layer mode along the <001> direction, while the Ag film grows in the <110> direction in the Stranski-Krastanov mode. The unit cell of a face-centered cubic lattice of the Au film is rotated azimuthally by 45° with respect to the unit cell of a zinc-blende lattice of the InP substrate. The islands of Ag(110) crystallites prefer to orient their (100) faces along the direction of the 4 times superlattice of the InP(001)-p(2 × 4) surface. The analysis of the RBS-channeling minimum yield of 1.5 MeVHe ions incident along the [001] direction of the InP(OOl) substrate shows that both the epitaxially grown Au film and Ag crystallite of less than 20Å in thickness are excellent in crystalline quality. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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