In situ P-doped Si and SiGe epitaxial films grown by remote plasma enhanced chemical vapor deposition.

Autor: Thomas, S., Fretwell, J., Kinosky, D., Qian, R., Mahajan, A., Munguía, P., Banerjee, S., Tasgh, A., Magee, C.
Zdroj: Journal of Electronic Materials; Mar1995, Vol. 24 Issue 3, p183-188, 6p
Abstrakt: Remote plasma-enhanced chemical vapor deposition has been applied to grow in- situ doped n-type epitaxial Si and SiGe with the introduction of phosphine. Growth rates and dopant incorporation have been studied as a function of process parameters (temperature, rf power, and dopant gas flow). Growth rates remain unaltered with the introduction of PH during deposition, unlike in many other low temperature growth techniques. Phosphorus incorporation shows a linear dependence on PH flow rate, but has little if any dependence on the other growth parameters, such as radio frequency power and substrate temperature, for the ranges of parameters that were examined. Phosphorus concentrations as high as 4 × 10 cm at 14 W have been obtained. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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