| Autor: |
Zajic, V., Kloesel, K., Ngo, D., Kibuule, P., Oladipupo, A., Fogarty, T., Kohler, R., Stassinopulos, E. |
| Zdroj: |
Journal of Electronic Materials; Jul1990, Vol. 19 Issue 7, p689-697, 9p |
| Abstrakt: |
Radiation hardened 16K and 64K CMOS SRAMs were tested at the Brookhaven SEU Test Facility. No failures of 16K SRAMs were observed at room temperature with any value of the feedback resistors. SEU cross section measured at elevated temperatures was a function of reduced feedback resistance. A difference was observed in critical LET for Br and Au ions. SEU cross section decreased at very high angles of incidence. After initial SEU testing, the 64K SRAM was degraded by proton total dose irradiation. An increase in the SEU cross section as well as imprinting of the memory pattern was observed. Test chips fabricated by the same technology were also submitted to proton radiation. Threshold voltage shift was measured for NMOS transistors with and without inversion bias. An increase in the density of interface states for both NMOS and PMOS transistors was measured by the charge-pumping technique. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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