| Autor: |
Allovon, M., Primot, J., Gao, Y., Quillec, M. |
| Zdroj: |
Journal of Electronic Materials; Jul1989, Vol. 18 Issue 4, p505-510, 6p |
| Abstrakt: |
The existence of Automatic Lattice Matching MBE growth is reported for the first time. This ALM effect was observed in the growth of AllnAs on InP at a substrate temper-ature high enough for significant In desorption to occur. It is attributed to the influence of strain on the growth mechanism. A thermodynamical description of the growth in-cluding the influence of the strain is proposed and discussed, showing that the influence of the strain on the thermodynamical equilibrium alone does not appear adequate to completely explain the observed effect. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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