| Autor: |
Kahn, A., Stiles, K., Mao, D., Horng, S., Young, K., McKinley, J., Kilday, D., Margaritondo, G. |
| Zdroj: |
Journal of Electronic Materials; Jan1989, Vol. 18 Issue 1, p33-37, 5p |
| Abstrakt: |
The formation of Ga-, Mn- and Ca-GaAs(110) interfaces is studied with soft x-ray and ultra-violet photoemission spectroscopy. Band bending at the semiconductor surface is analyzed in terms of a two-step model of the pinning of the Fermi level. At low coverage, adsorbate induced donor states produce rapid band bending on p-GaAs. A well defined trend in the energy level of the adsorbate-induced donor state vs ionization energy of the adatom emerges from these and previous data on In-, A1-, Ag-, Au-, Pd-, and Sn-GaAs(110) interfaces. At high coverage, the pinning of the Fermi level is associated with appearance of metallic character at the interface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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