| Autor: |
Rodot, H., Cassagne, P., Hamidi, M. |
| Zdroj: |
Journal of Electronic Materials; May1981, Vol. 10 Issue 3, p481-500, 20p |
| Abstrakt: |
In order to obtain single crystalline ribbons from raw materials, we suggest a new method. From a narrow melted zone, formed along a generative line of a turning cylinder of polycrystalline material, a ribbon of material is continuously pulled in a direction perpendicular to the generative line and making a small angle with the horizontal plane. We have studied the application of the method to the silicon ribbon. We have studied the heat flux and temperatures profiles, pointing out relations between melted zone configuration, supplied power and rotation rate. The study of the melted zone hydrostatic equilibrium configurations and their influence on the ribbon growth characteristics and stability, improves on previous results for the melted zone central area and determines the shape of the floating zone lateral sides. The main advantages of the method for the production of silicon solar cells or in the space metallurgy field are discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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