| Autor: |
Pizzarello, F., Coker, J. |
| Zdroj: |
Journal of Electronic Materials; Feb1975, Vol. 4 Issue 1, p25-36, 12p |
| Abstrakt: |
The piezoelectric properties of epitaxial AℓN films grown by the method of chemical vapor deposition utilizing trimethylaluminum and ammonia as chemical reactants were investigated. Large variations of the measured electromechanical coupling coefficient, k, were found in different regions of the same sample and on different samples having approximately the same h/λ value. Electron microscope observations of replicated as-grown and etched surfaces of epitaxial AℓN were used to show a relationship between surface facet ordering and the magnitude of k. A plot of k measured at various h/λ values shows k as large as 0.6% for films grown at a rate of ˜0.2 µm/min and measured at ˜400 MHz. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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