| Autor: |
Li, Cheng-Syun, Hou, Li-Jen, Li, Sheng-Shian |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Feb2012, Vol. 33 Issue 2, p272-274, 3p |
| Abstrakt: |
Deep-submicrometer-gap CMOS–MEMS “composite” resonators fabricated using 0.18- \mu\m-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 \k\Omega at 15.3 MHz. A simple maskless wet release process has been successfully transferred from a 0.35-\mu\m platform to an advanced 0.18-\mu\m version, capable of offering enhanced gap spacing and transduction area for CMOS–MEMS resonators monolithically integrated with high-performance CMOS circuitry. This proposed platform offers ease of use, fast turnaround time, low cost, convenient prototyping, and inherent MEMS-circuit integration, therefore showing great potential toward future integrated sensing and single-chip RF applications. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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