Migration of implanted indium in silicon as a function of thermal annealing.
Autor: | Reihl, R. F., Smith, G. A., Katz, W., Koch, E. F. |
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Zdroj: | Applied Physics Letters; 1983, Vol. 42 Issue 7, p575-577, 3p |
Databáze: | Complementary Index |
Externí odkaz: |