Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition.
| Autor: | Khan, M. A., Skogman, R. A., Schulze, R. G., Gershenzon, M. |
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| Zdroj: | Applied Physics Letters; 1983, Vol. 42 Issue 5, p430-432, 3p |
| Databáze: | Complementary Index |
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