Rapid degradation of InGaAsP/InP double heterostructure lasers due to <110> dark line defect formation.

Autor:	Endo, K., Matsumoto, S., Kawano, H., Sakuma, I., Kamejima, T.
Zdroj:	Applied Physics Letters; 1982, Vol. 40 Issue 11, p921-923, 3p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu