C-V characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layer.
| Autor: | Suzuki, Akira, Mameno, Kazunobu, Furui, Nobuyuki, Matsunami, Hiroyuki |
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| Zdroj: | Applied Physics Letters; 1981, Vol. 39 Issue 1, p89-90, 2p |
| Databáze: | Complementary Index |
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