| Autor: |
Grabecki, G., Dietl, T., Sobkowicz, P., Kossut, J., Zawadzki, W. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1984, Vol. 45 Issue 11, p1214-1216, 3p |
| Abstrakt: |
We show that charged traps at grain boundaries in p-Hg1-xMnxTe lead to the formation of an inversion layer. The layers are dominant channels of electrical conductivity at low temperatures. By means of the Shubnikov-de Haas effect measurements we demonstrate that the electron gas in the layer forms a quasi-two-dimensional system. We determine electric subband populations and effective masses. We establish parameters of the potential well at the grain boundary within a simple model. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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