| Autor: |
Caine, E. J., Subbanna, S., Kroemer, H., Merz, J. L., Cho, A. Y. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1984, Vol. 45 Issue 10, p1123-1125, 3p |
| Abstrakt: |
We report experimental verification of the prediction of widely bias-tunable below-gap luminescence, from lattice-matched (p) (Al,In)As/ (n) InP heterojunctions, a system that has been predicted to have staggered lineup. The diodes, grown by molecular beam epitaxy, exhibit strong luminescence at 1.4 K, with a peak energy that shifts from 0.97 to 1.04 eV as the (pulsed) current density is increased from 4.5 to 40 A/cm2. Nonshifting injection luminescence at 1.4 eV, due to hole injection into the n-InP substrate, was also present, but appreciably weaker (<25%) than the interface luminescence. The spectra indicate that the band lineup in the (Al,In)As/InP system is indeed staggered, with a residual gap at the interface close to 0.96 eV. The corresponding conduction and valence-band offsets are 0.52 and 0.40 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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