| Autor: |
Pries, W., McLeod, R. D., Card, H. C., Kao, K. C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1984, Vol. 45 Issue 7, p734-736, 3p |
| Abstrakt: |
An optical mechanism based on temporal changes in reflectivity during the growth of hydrogenated amorphous silicon films is shown to provide for an accurate determination of the degree of hydrogen incorporation, as well as the growth rate of the growing film. This mechanism is described experimentally and modeled phenomenologically, and is expected to provide a basis for in situ correlation of hydrogen incorporation with process parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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