| Autor: |
Nemashkalo, A., Chapagain, P. R., Peters, R. M., Farmer, J., Gupta, S., Strzhemechny, Y. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jan2012, Vol. 111 Issue 2, p023704, 7p, 1 Black and White Photograph, 1 Chart, 5 Graphs |
| Abstrakt: |
Elucidation of microscopic properties of synthetic diamond films, such as formation and evolution of bulk and surface defects, chemistry of dopants, is necessary for a reliable quality control and reproducibility in applications. Surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy were employed to study diamond thin films grown on silicon by microwave plasma-assisted chemical vapor deposition and hot-filament chemical vapor deposition with different levels of boron doping in conjunction with gamma irradiation. SPV experiments showed that while the increase of boron concentration leads to a semiconductor-metal transition, subsequent gamma irradiation reverts quasi-metallic samples back to a semiconducting state by compensating electrical activity of boron possibly via hydrogen. One of the most pronounced common transitions observed at ∼3.1-3.2 eV in the SPV spectra was also present in all of the PL spectra. It is likely that this is a signature of the sp2-hybridized carbon clusters in or in the vicinity of grain boundaries. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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